| PART |
Description |
Maker |
| MGSF1N02LT1 MGSF1N02LT3 MGSF1N02L MGSF1N02LT1-D |
Power MOSFET 750 mAmps, 20 Volts 750 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
Power MOSFET 750 mAmps, 20 Volts N-Channel SOT-23
|
ONSEMI[ON Semiconductor]
|
| MGSF1P02ELT1 MGSF1P02ELT3 MGSF1P02ELT1-D |
Power MOSFET 750 mAmps, 20 Volts P?Channel SOT?23
Power MOSFET 750 mAmps, 20 Volts PChannel SOT23
Power MOSFET 750 mAmps, 20 Volts P-Channel SOT-23
|
ONSEMI[ON Semiconductor]
|
| MGSF1P02EL |
Power MOSFET 750 mAmps, 20 Volts
|
ON Semiconductor
|
| NTES1P02 NTES1P02-D |
P?Channel Power MOSFET
Power MOSFET 50 mAmps, 20 Volts P-Channel(50mA,20V,P沟道增强型MOS场效应管)
Power MOSFET 50 mAmps, 20 Volts P-Channel SC-75
|
ON Semiconductor
|
| LBSS84WT1G |
Power MOSFET F30 mAmps, 50 Volts P_Channel SOT_323
|
Leshan Radio Company
|
| LBSS84WT1G |
Power MOSFET F30 mAmps, 50 Volts P_Channel SOT_323
|
乐山无线电股份有限公
|
| NTES1N02 |
Power MOSFET 50 mAmps, 20 Volts N-Channel(50mA,20V,N沟道增强型MOS场效应管)
|
ON Semiconductor
|
| MMBF170LT1 MMBF170LT1G MMBF170LT3 MMBF170LT3G |
Power MOSFET 500 mAmps, 60 Volts
Power MOSFET 500 mA, 60 V
|
ONSEMI[ON Semiconductor]
|
| APT752R4BN-GULLWING |
5.5 A, 750 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
|
| 10N75G-TA3-T 10N75G-TF1-T 10N75L-TA3-T 10N75L-TF1- |
10 Amps, 750 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 2SK2210 |
4 A, 750 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220E
|
PANASONIC CORP
|
| RFP2N12L |
2A/ 120V/ 1.750 Ohm/ Logic Level/ N-Channel Power MOSFET
2A 120V 1.750 Ohm Logic Level N-Channel Power MOSFET
2A, 120V, 1.750 Ohm, Logic Level, N-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
|
